DMN313DLT document number: ds35078 rev. 2 - 2 1 of 5 www.diodes.com august 2011 ? diodes incorporated DMN313DLT new product n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = 25c 30v 2? @ v gs = 4v 270ma 3.2? @ v gs = 2.5v 210ma description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? backlighting ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 1) ? esd protected up to 2kv ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-523 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.002 grams (approximate) ordering information (note 3) part number case packaging DMN313DLT-7 sot-523 3000 / tape & reel notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be f ound on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2010 2011 2012 2013 2014 2015 2016 code x y z a b c d month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot-523 top view top view pin-out esd protected to 2kv g s d source gate protection diode gate drai n equivalent circuit na2 ym na2 = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september)
DMN313DLT document number: ds35078 rev. 2 - 2 2 of 5 www.diodes.com august 2011 ? diodes incorporated DMN313DLT new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 4) v gs = 4.0v steady state t a = 25c t a = 70c i d 0.27 0.21 a continuous drain current (note 5) v gs = 4.0v steady state t a = 25c t a = 70c i d 0.31 0.25 a continuous drain current (note 5) v gs = 4.0v t 10s t a = 25c t a = 70c i d 0.38 0.3 a continuous drain current (note 4) v gs = 2.5v steady state t a = 25c t a = 70c i d 0.21 0.15 a continuous drain current (note 5) v gs = 2.5v t 10s t a = 25c t a = 70c i d 0.29 0.22 a pulsed drain current (note 6) i dm 1.2 a thermal characteristics characteristic symbol max unit power dissipation (note 4) p d 0.28 w thermal resistance, junction to ambient @t a = 25c (note 4) r ja 474 c/w power dissipation (note 5) p d 0.36 w thermal resistance, junction to ambient @t a = 25c (note 5) r ja 361 c/w power dissipation (note 5) t 10s p d 0.52 w thermal resistance, junction to ambient @t a = 25c (note 5) t 10s r ja 252 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @ t a = 25c unless otherwise stated characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 0.1 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 1.0 a v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 0.5 - 1.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 1.3 2 v gs = 4v, i d = 10ma - 1.6 3.2 v gs = 2.5v, i d = 1ma forward transfer admittance |y fs | - 93 - ms v ds = 3v, i d = 10ma diode forward voltage v sd - 0.7 1.3 v v gs = 0v, i s = 115ma dynamic characteristics (note 8) input capacitance c iss - 36.3 - pf v ds = 5v, v gs = 0v, f = 1.0mhz output capacitance c oss - 7.6 - reverse transfer capacitance c rss - 4.7 - gate resistance r g - 128 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 0.5 - nc v gs = 4.5v, v ds = 15v, i d = 10ma gate-source charge q g s - 0.1 - gate-drain charge q g d - 0.1 - turn-on delay time t d ( on ) - 4.5 - ns v gs = 4.5v, v ds = 15v, r g = 2 ? , i d = 180ma turn-on rise time t r - 2.24 - ns turn-off delay time t d ( off ) - 19.2 - ns turn-off fall time t f - 28.2 - ns notes: 4. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 5. device mounted on 2? x 2? fr-4 pcb with high coverage 2 oz. copper, single sided. 6. repetitive rating, pulse width limited by junction temperature. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
DMN313DLT document number: ds35078 rev. 2 - 2 3 of 5 www.diodes.com august 2011 ? diodes incorporated DMN313DLT new product v , drain-source voltage (v) ds fig. 1 typical output characteristics -i , d r ai n c u r r e n t (a) d 0.0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 10v gs v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 5.0v gs v = 4.0v gs 0 0.5 1.0 1.5 2.0 2.5 3.0 i, d r ai n c u r r e n t (a) d v , gate-source voltage (v) gs fig. 2 typical transfer characteristics 0.001 0.01 0.1 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v ds r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i , drain-source current (a) d fig. 3 typical on-resistance vs. drain current and gate voltage 0 0.5 1 1.5 2 2.5 3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v = 10v gs v = 2.5v gs v = 4.5v gs i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.2 0.4 0.6 0.8 1 0.1 1 10 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5.0v gs -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a fig. 5 on-resistance variation with temperature r , s t a t i c d r ai n -s o u r c e, o n - r esis t a n c e ( ) dson 0 0.5 1 1.5 2 2.5 3 v = 10v i = 300ma gs d v = 10v i = 150ma gs d v , gate threshold voltage (v) gs(th) -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a fig. 6 gate threshold variation vs. ambient temperature 0.6 0.8 1 1.2 1.4 1.6 i = 1ma d
DMN313DLT document number: ds35078 rev. 2 - 2 4 of 5 www.diodes.com august 2011 ? diodes incorporated DMN313DLT new product 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 v , drain-source voltage (v) ds fig. 7 typical junction capacitance c iss f=1mhz c oss c rss c , j u n c t i o n c a p a c i t a n c e ( p f ) t 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 q - (nc) fig. 08 gate charge characteristics g v = 15v i = 800ma ds d v (v) gs 0.001 0.01 0.1 1 r(t), transient thermal resistance r(t) @ d=0.05 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t) @ d=0.9 r(t) @ d=0.7 r(t) @ d=0.5 r(t) @ d=0.3 r(t) @ d=0.1 r(t) @ d=0.02 r(t) @ d=0.01 r(t) @ d=0.005 r(t) @ d=single pulse r(t)=r(t) * r ? ja ja r =54c/w duty cycle, d=t1/ t2 ja t1, pulse duration time (sec) fig. 9 transient thermal resistance package outline dimensions sot-523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d ? ? 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 0 8 ? all dimensions in mm a m j l d b c h k g n
DMN313DLT document number: ds35078 rev. 2 - 2 5 of 5 www.diodes.com august 2011 ? diodes incorporated DMN313DLT new product suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com dimensions value (in mm) z 1.8 x 0.4 y 0.51 c 1.3 e 0.7 x e y c z
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